Cadmium sulfide (CdS) is an important II-VI direct band gap semiconductor with a band gap of 2.42 eV at room temperature. Due to its excellent electrical and optical properties, it has important application prospects in various optoelectronic devices and functional devices. However, because of the self-compensation effect, the doping method using classical impurity atom implantation has not yet been able to obtain a stable p-type CdS, which has seriously hindered the application and development of optoelectronic devices based on CdS semiconductor materials. .
Recently, the team of Prof. Luo Linbao from the Huangshan Youth Academician of School of Electronic Science and Applied Physics of our university cooperated with the laboratory led by Professor Yu Shuhong of the University of Science and Technology of China. They proposed a novel surface charge transfer doping technology to pass through the surface of CdS nanowires. A layer of MoO3 film was wrapped and the p-type doping of CdS was successfully achieved. Electrical characterization of field-effect devices based on a single nanowire showed that the prepared CdS nanowires have an extremely high hole mobility and their conductance can be adjusted by controlling the thickness of the surface dopant. In addition, they also skillfully designed and prepared a high performance single CdS nanowire homogenous pn junction photovoltaic device. Relevant research results were published in the famous international journal Advanced Energy Materials (Adv. Energy Mater. 2013, 5, 579-583). After the publication of the paper, it was immediately followed by the attention of the world-famous academic media Materials Views (China), and was introduced and reported with the title of “Ultra-high-mobility p-type CdS nanowires: surface charge transfer doping and its photovoltaic devices†(http:/ /).
In addition, the research group also successfully prepared a high-performance single-layer graphene / zinc oxide nanorod array Schottky junction UV detector. It has been found that the special structure composed of such single-layer graphene and zinc oxide nanorod arrays has excellent optical properties. On the one hand, since the thickness of graphene is negligible, the ultraviolet light is almost lossless when the light is irradiated on the surface of the device. The graphene reaches the top of the zinc oxide array through the graphene; on the other hand, based on finite element optical simulations, it is found that the incident light energy forms a strong electric field energy distribution at the top of the zinc oxide, which makes the inside of the zinc oxide produce more The photogenerated minority carriers, Schottky junction, under the action of reverse voltage, quickly drift to form photocurrent. This research solves the problem that one-dimensional nanostructure photodetectors are affected by the carrier depletion layer on the surface of nanostructures, which results in slower detection speeds. This will lay a good theory and experiment for the development of new high-performance ultraviolet photodetectors. basis. Relevant results were published in the magazine of the small magazine of John Wiley [DOI:10.1002/smll.201203188]. (Rolin Paul / text)
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