Polysilicon industry development

From the perspective of industrialization, the center of gravity has evolved from single crystal to polycrystalline, the main reason is; [1] less and less tailpipes are available for solar cells; [2] for solar cells, square substrates are more In addition, the polycrystalline silicon obtained by the casting method and the direct solidification method can directly obtain a square material; [3] the production process of polycrystalline silicon is continuously progressing, and the fully automatic casting furnace can produce more than 200 kg of silicon ingot per production cycle (50 hours). The size of the crystal grains reaches the centimeter level; [4] due to the rapid research and development of the monocrystalline silicon process in the past decade, the process is also applied to the production of polycrystalline silicon cells, such as the selection of corrosion emission junctions, back surface fields, corroded suede Surface and bulk passivation, fine metal gate electrode, screen printing technology can reduce the width of the gate electrode to 50 microns, the height can reach more than 15 microns, rapid thermal annealing technology for polysilicon production can greatly shorten the process time, single The sheet thermal process time can be completed in less than one minute, and the cell conversion efficiency on the 100 square centimeter polycrystalline silicon wafer is more than 14%. According to reports, the current efficiency of cells fabricated on 50-60 micron polycrystalline silicon substrates exceeds 16%. Using mechanical grooved and screen printing technology, the efficiency is over 17% on 100 square centimeters of polycrystals, and the mechanical groove has an efficiency of 16% on the same area. The buried gate structure is used, and the mechanical groove is on the 130 square centimeter polycrystal. The battery efficiency reached 15.8%.

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